?2009 ixys all rights reserved 1 - 4 20090209d ixkh 30n60c5 ixys reserves the right to change limits, test conditions and dimensions. symbol conditions characteristic values (t vj = 25 c, unless otherwise speci ed) min. typ. max. r dson v gs = 10 v; i d = 16 a 110 125 m v gs(th) v ds = v gs ; i d = 1.1 ma 2.5 3 3.5 v i dss v ds = 600 v; v gs = 0 v t vj = 25? t vj = 125? 20 2 a ? i gss v gs = 20 v; v ds = 0 v 100 na c iss c oss v gs = 0 v; v ds = 100 v f = 1 mhz 2500 120 pf pf q g q gs q gd v gs = 0 to 10 v; v ds = 400 v; i d = 16 a 53 12 18 70 nc nc nc t d(on) t r t d(off) t f v gs = 10 v; v ds = 400 v i d = 16 a; r g = 3.3 15 5 50 5 ns ns ns ns r thjc 0.4 k/w i d25 = 30 a v dss = 600 v r ds(on) max = 0.125 coolmos ? 1) power mosfet features ?fast coolmos 1) power mosfet 4 th generation - high blocking capability - lowest resistance - avalanche rated for unclamped inductive switching (uis) - low thermal resistance due to reduced chip thickness ?enhanced total power density applications ?switched mode power supplies (smps) ?uninterruptible power supplies (ups) ?power factor correction (pfc) ?welding ?inductive heating ?pdp and lcd adapter mosfet symbol conditions maximum ratings v dss t vj = 25? 600 v v gs 20 v i d25 i d90 t c = 25? t c = 90? 30 21 a a e as e ar single pulse repetitive 708 1.2 mj mj dv/dt mosfet dv/dt ruggedness v ds = 0...480 v 5 0 v/ns d g s n-channel enhancement mode low r dson , high v dss mosfet ultra low gate charge i d = 11 a; t c = 25? 1) coolmos is a trademark of in neon technologies ag. to-247 ad g d s q d(tab)
?2009 ixys all rights reserved 2 - 4 20090209d ixkh 30n60c5 ixys reserves the right to change limits, test conditions and dimensions. source-drain diode symbol conditions characteristic values (t vj = 25?, unless otherwise speci ed) min. typ. max. i s v gs = 0 v 16 a v sd i f = 16 a; v gs = 0 v 0.9 1.2 v t rr q rm i rm i f = 16 a; -di f /dt = 100 a/?; v r = 400 v 430 9 42 ns ? a component symbol conditions maximum ratings t vj t stg operating -55...+150 -55...+150 ? ? m d mounting torque 0.8 ... 1.2 nm symbol conditions characteristic values min. typ. max. r thch with heatsink compound 0.25 k/w weight 6g
?2009 ixys all rights reserved 3 - 4 20090209d ixkh 30n60c5 ixys reserves the right to change limits, test conditions and dimensions. fig. 1 power dissipation fig. 2 typ. output characteristics fig. 3 typ. output characteristics 0 40 80 120 160 0 50 100 150 200 250 300 350 t c [ c] p tot [ w] symbol inches millimeters min max min max a 0.185 0.209 4.70 5.30 a1 0.087 0.102 2.21 2.59 a2 0.059 0.098 1.50 2.49 d 0.819 0.845 20.79 21.45 e 0.610 0.640 15.48 16.24 e2 0.170 0.216 4.31 5.48 e 0.215 bsc 5.46 bsc l 0.780 0.800 19.80 20.30 l1 - 0.177 - 4.49 ?p 0.140 0.144 3.55 3.65 q 0.212 0.244 5.38 6.19 s 0.242 bsc 6.14 bsc b 0.039 0.055 0.99 1.40 b2 0.065 0.094 1.65 2.39 b4 0.102 0.135 2.59 3.43 c 0.015 0.035 0.38 0.89 d1 0.515 - 13.07 - d2 0.020 0.053 0.51 1.35 e1 0.530 - 13.45 - ?p1 - 0.291 - 7.39 to-247 ad outline 4.5 v 5v 5.5 v 6v 7v 8v 10 v 20 v 0 15 30 45 60 75 90 105 120 0 5 10 15 20 v ds [v] i d ] a [ 4.5 v 5v 5.5 v 6v 7v 8v 10 v 20 v 0 10 20 30 40 50 05101520 v ds [v] i d ] a [ t j = 25c v gs = v gs = t j = 125c
?2009 ixys all rights reserved 4 - 4 20090209d ixkh 30n60c5 ixys reserves the right to change limits, test conditions and dimensions. fig. 5 drain-source on-state resistance fig. 4 typ. drain-source on-state resistance characteristics of igbt fig. 7 forward characteristic of reverse diode fig. 8 typ. gate charge fig. 10 avalanche energy fig. 11 drain-source breakdown voltage fig. 6 typ. transfer characteristics fig. 9 typ. capacitances fig. 12 max. transient thermal impedance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 0 10 -1 10 -2 t p [s] z c j h t ] w / k [ 540 580 620 660 700 -60 -20 20 60 100 140 180 t j [c] v ) s s d ( r b ] v [ 0 200 400 600 800 20 60 100 140 180 t j [c] e s a ] j m [ ciss coss crss 10 5 10 4 10 3 10 2 10 1 10 0 050100150200 v ds [v] c] f p [ 12 0v 40 0v 0 1 2 3 4 5 6 7 8 9 10 0 102030405060 q gate [nc] v s g ] v [ 25 c 150 c 25 c, 98% 150 c, 98% 10 2 10 1 10 0 10 -1 00.511.52 v sd [v] i f ] a [ 25 c 150 c 0 40 80 120 0246810 v gs [v] i d ] a [ typ 98 % 0 0.1 0.2 0.3 0.4 -60 -20 20 60 100 140 180 t j [c] r ) n o ( s d [ ] 5v 6v 6.5 v 7v 20 v 0 0.1 0.2 0.3 0.4 0.5 0 1020304050 i d [a] r ) n o ( s d [ ] 5.5 v v ds = t jv = 150c i d = 16 a v gs = 10 v v ds > 2 r ds(on) max i d t j = t j = v ds = 120 v v gs = 0 v f = 1 mhz i d = 11 a i d = 0.25 ma d = t p /t i d = 16 a pulsed
|
